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Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected...

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Detalhes bibliográficos
Publicado no:Nat Commun
Main Authors: Gao, Xuejiao, Guan, Bin, Mesli, Abdelmadjid, Chen, Kaixiang, Dan, Yaping
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2018
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5760684/
https://ncbi.nlm.nih.gov/pubmed/29317684
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-02564-3
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