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Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers
It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected...
Guardat en:
| Publicat a: | Nat Commun |
|---|---|
| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2018
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5760684/ https://ncbi.nlm.nih.gov/pubmed/29317684 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-02564-3 |
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