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Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS(2) Using MoO(3) Thin Film as a Precursor for Coevaporation
[Image: see text] Chemical vapor deposition (CVD) is a powerful method employed for high-quality monolayer crystal growth of 2D transition metal dichalcogenides with much effort invested toward improving the growth process. Here, we report a novel method for CVD-based growth of monolayer molybdenum...
Gorde:
| Argitaratua izan da: | ACS Omega |
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| Egile Nagusiak: | , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
American Chemical Society
2018
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| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6643554/ https://ncbi.nlm.nih.gov/pubmed/31458458 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.8b02978 |
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