Loading...
Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-κ Y(2)O(3) on GaAs(001)-4 × 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy
[Image: see text] Y(2)O(3) was in situ deposited on a freshly grown molecular beam epitaxy GaAs(001)-4 × 6 surface by atomic layer deposition (ALD). In situ synchrotron radiation photoemission was used to study the mechanism of the tris(ethylcyclopentadienyl)yttrium [Y(CpEt)(3)] and H(2)O process. T...
Na minha lista:
| Udgivet i: | ACS Omega |
|---|---|
| Main Authors: | , , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
American Chemical Society
2018
|
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6641429/ https://ncbi.nlm.nih.gov/pubmed/31458518 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.7b01564 |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|