Export afgerond — 

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

This paper reports on the direct qualitative and quantitative performance comparisons of the field-effect transistors (FETs) based on vertical gallium nitride nanowires (GaN NWs) with different NW numbers (i.e., 1–100) and diameters (i.e., 220–640 nm) fabricated on the same wafer substrate to prove...

Volledige beschrijving

Bewaard in:
Bibliografische gegevens
Gepubliceerd in:Sci Rep
Hoofdauteurs: Fatahilah, Muhammad Fahlesa, Yu, Feng, Strempel, Klaas, Römer, Friedhard, Maradan, Dario, Meneghini, Matteo, Bakin, Andrey, Hohls, Frank, Schumacher, Hans Werner, Witzigmann, Bernd, Waag, Andreas, Wasisto, Hutomo Suryo
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: Nature Publishing Group UK 2019
Onderwerpen:
Article
Online toegang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6635513/
https://ncbi.nlm.nih.gov/pubmed/31311946
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-46186-9
Tags: Voeg label toe
Geen labels, Wees de eerste die dit record labelt!

Gelijkaardige items