A carregar...
Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
This paper reports on the direct qualitative and quantitative performance comparisons of the field-effect transistors (FETs) based on vertical gallium nitride nanowires (GaN NWs) with different NW numbers (i.e., 1–100) and diameters (i.e., 220–640 nm) fabricated on the same wafer substrate to prove...
Na minha lista:
| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2019
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6635513/ https://ncbi.nlm.nih.gov/pubmed/31311946 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-46186-9 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|