Fatahilah, M. F., Yu, F., Strempel, K., Römer, F., Maradan, D., Meneghini, M., . . . Wasisto, H. S. (2019). Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. Sci Rep.
استشهاد بنمط شيكاغوFatahilah, Muhammad Fahlesa, et al. "Top-down GaN Nanowire Transistors With Nearly Zero Gate Hysteresis for Parallel Vertical Electronics." Sci Rep 2019.
MLA استشهادFatahilah, Muhammad Fahlesa, et al. "Top-down GaN Nanowire Transistors With Nearly Zero Gate Hysteresis for Parallel Vertical Electronics." Sci Rep 2019.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.