Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

This paper reports on the direct qualitative and quantitative performance comparisons of the field-effect transistors (FETs) based on vertical gallium nitride nanowires (GaN NWs) with different NW numbers (i.e., 1–100) and diameters (i.e., 220–640 nm) fabricated on the same wafer substrate to prove...

Descripció completa

Guardat en:
Dades bibliogràfiques
Publicat a:Sci Rep
Autors principals: Fatahilah, Muhammad Fahlesa, Yu, Feng, Strempel, Klaas, Römer, Friedhard, Maradan, Dario, Meneghini, Matteo, Bakin, Andrey, Hohls, Frank, Schumacher, Hans Werner, Witzigmann, Bernd, Waag, Andreas, Wasisto, Hutomo Suryo
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group UK 2019
Matèries:
Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6635513/
https://ncbi.nlm.nih.gov/pubmed/31311946
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-46186-9
Etiquetes: Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!

Ítems similars