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Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
This paper reports on the direct qualitative and quantitative performance comparisons of the field-effect transistors (FETs) based on vertical gallium nitride nanowires (GaN NWs) with different NW numbers (i.e., 1–100) and diameters (i.e., 220–640 nm) fabricated on the same wafer substrate to prove...
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| Publicat a: | Sci Rep |
|---|---|
| Autors principals: | , , , , , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Nature Publishing Group UK
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6635513/ https://ncbi.nlm.nih.gov/pubmed/31311946 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-46186-9 |
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