A carregar...
Revealing the intrinsic nature of the mid-gap defects in amorphous Ge(2)Sb(2)Te(5)
Understanding the relation between the time-dependent resistance drift in the amorphous state of phase-change materials and the localised states in the band gap of the glass is crucial for the development of memory devices with increased storage density. Here a machine-learned interatomic potential...
Na minha lista:
| Publicado no: | Nat Commun |
|---|---|
| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2019
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6624207/ https://ncbi.nlm.nih.gov/pubmed/31296874 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-019-10980-w |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|