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Pressure-induced reversible amorphization and an amorphous–amorphous transition in Ge(2)Sb(2)Te(5) phase-change memory material
Ge(2)Sb(2)Te(5) (GST) is a technologically very important phase-change material that is used in digital versatile disks-random access memory and is currently studied for the use in phase-change random access memory devices. This type of data storage is achieved by the fast reversible phase transitio...
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| Autors principals: | , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
National Academy of Sciences
2011
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3127918/ https://ncbi.nlm.nih.gov/pubmed/21670255 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1107464108 |
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