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Origin of radiation tolerance in amorphous Ge(2)Sb(2)Te(5) phase-change random-access memory material
The radiation hardness of amorphous Ge(2)Sb(2)Te(5) phase-change random-access memory material has been elucidated by ab initio molecular-dynamics simulations. Ionizing radiation events have been modeled to investigate their effect on the atomic and electronic structure of the glass. Investigation o...
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| Publicat a: | Proc Natl Acad Sci U S A |
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| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
National Academy of Sciences
2018
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6003528/ https://ncbi.nlm.nih.gov/pubmed/29735691 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1800638115 |
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