Graphene Schottky Junction on Pillar Patterned Silicon Substrate

A graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.6 ideality factor at room temperature and exhibits strongly bias- and tempera...

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Veröffentlicht in:Nanomaterials (Basel)
Hauptverfasser: Luongo, Giuseppe, Grillo, Alessandro, Giubileo, Filippo, Iemmo, Laura, Lukosius, Mindaugas, Alvarado Chavarin, Carlos, Wenger, Christian, Di Bartolomeo, Antonio
Format: Artigo
Sprache:Inglês
Veröffentlicht: MDPI 2019
Schlagworte:
Article
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6566384/
https://ncbi.nlm.nih.gov/pubmed/31027368
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9050659
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