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Theoretical Investigation of Near-Infrared Fabry–Pérot Microcavity Graphene/Silicon Schottky Photodetectors Based on Double Silicon on Insulator Substrates

In this work a new concept of silicon resonant cavity enhanced photodetector working at 1550 nm has been theoretically investigated. The absorption mechanism is based on the internal photoemission effect through a graphene/silicon Schottky junction incorporated into a silicon-based Fabry–Pérot optic...

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Bibliografske podrobnosti
izdano v:Micromachines (Basel)
Glavni avtor: Casalino, Maurizio
Format: Artigo
Jezik:Inglês
Izdano: MDPI 2020
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC7465991/
https://ncbi.nlm.nih.gov/pubmed/32707786
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11080708
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