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Theoretical Investigation of Near-Infrared Fabry–Pérot Microcavity Graphene/Silicon Schottky Photodetectors Based on Double Silicon on Insulator Substrates

In this work a new concept of silicon resonant cavity enhanced photodetector working at 1550 nm has been theoretically investigated. The absorption mechanism is based on the internal photoemission effect through a graphene/silicon Schottky junction incorporated into a silicon-based Fabry–Pérot optic...

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Detalhes bibliográficos
Publicado no:Micromachines (Basel)
Autor principal: Casalino, Maurizio
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI 2020
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC7465991/
https://ncbi.nlm.nih.gov/pubmed/32707786
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/mi11080708
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