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Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions
This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier Φ(B) of ~673 meV is extrapol...
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| Udgivet i: | Sensors (Basel) |
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| Main Authors: | , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI
2018
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6263675/ https://ncbi.nlm.nih.gov/pubmed/30400282 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/s18113755 |
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