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I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor
We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as [Formula: see text]. We show that the enhanced photocurrent...
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| Gepubliceerd in: | Nanomaterials (Basel) |
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| Hoofdauteurs: | , , , , , |
| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
MDPI
2017
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| Onderwerpen: | |
| Online toegang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5535224/ https://ncbi.nlm.nih.gov/pubmed/28654012 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano7070158 |
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