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Graphene Schottky Junction on Pillar Patterned Silicon Substrate
A graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.6 ideality factor at room temperature and exhibits strongly bias- and tempera...
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| Publicat a: | Nanomaterials (Basel) |
|---|---|
| Autors principals: | , , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6566384/ https://ncbi.nlm.nih.gov/pubmed/31027368 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9050659 |
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