Cargando...
High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN(x) Passivation Layer
In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R(ON, D)) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiN(x) passivation layer between the gate and drain electrodes. Instead of the...
Gardado en:
| Publicado en: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Springer US
2019
|
| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6548790/ https://ncbi.nlm.nih.gov/pubmed/31165332 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3025-8 |
| Tags: |
Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|