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High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN(x) Passivation Layer
In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R(ON, D)) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiN(x) passivation layer between the gate and drain electrodes. Instead of the...
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| Izdano u: | Nanoscale Res Lett |
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| Glavni autori: | , , , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Springer US
2019
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6548790/ https://ncbi.nlm.nih.gov/pubmed/31165332 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3025-8 |
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