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Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100 °C Using Sequential Surface Reactions
Low energy electrons may provide mechanisms to enhance thin film growth at low temperatures. As a proof of concept, this work demonstrated the deposition of gallium nitride (GaN) films over areas of ∼5 cm(2) at room temperature and 100 °C using electrons with a low energy of 50 eV from an electron f...
Gorde:
| Argitaratua izan da: | Chem Mater |
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| Egile Nagusiak: | , , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
2016
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6513341/ https://ncbi.nlm.nih.gov/pubmed/31092972 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.chemmater.6b00676 |
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