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Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100 °C Using Sequential Surface Reactions
Low energy electrons may provide mechanisms to enhance thin film growth at low temperatures. As a proof of concept, this work demonstrated the deposition of gallium nitride (GaN) films over areas of ∼5 cm(2) at room temperature and 100 °C using electrons with a low energy of 50 eV from an electron f...
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| 出版年: | Chem Mater |
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| 主要な著者: | , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
2016
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6513341/ https://ncbi.nlm.nih.gov/pubmed/31092972 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.chemmater.6b00676 |
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