Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT-IR) in vacuum are presented in this work. The growth of GaN thin films was done on a variety of substrates like silicon, sapphire and fused silica. Room temperature PL spectra of all the GaN films sh...

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Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Materials (Basel)
Päätekijät: Santana, Guillermo, de Melo, Osvaldo, Aguilar-Hernández, Jorge, Mendoza-Pérez, Rogelio, Monroy, B. Marel, Escamilla-Esquivel, Adolfo, López-López, Máximo, de Moure, Francisco, Hernández, Luis A., Contreras-Puente, Gerardo
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: MDPI 2013
Aiheet:
Article
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5512963/
https://ncbi.nlm.nih.gov/pubmed/28809356
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma6031050
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