Photoluminescence studies of Mg-doped gallium nitride films grown by metalorganic chemical vapor deposition

Mg-doped GaN epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) have been investigated by Photoluminescence, Raman scattering and X-ray Diffraction in the as-grown condition and after annealing. The photoluminescence measurement showed 2.9 eV band associated with the optical tr...

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Bibliografski detalji
Izdano u:Superficies y vacío
Glavni autori: C. Guarneros, V. Sánchez
Format: Artigo
Jezik:Inglês
Izdano: Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2012
Teme:
Física, Astronomía y Matemáticas
Mg
doped GaN
Raman scattering
Photoluminescence
ray Diffraction Annealing
Online pristup:https://www.redalyc.org/articulo.oa?id=94225421005
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