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New Hindered Amide Base for Aryne Insertion into Si–P, Si–S, Si–N, and C–C Bonds
A general method for a new, hindered lithium diadamantylamide (LDAM) base-promoted insertion of arynes into Si–P, Si–S, Si–N, and C–C bonds is described. Arynes are generated from easily available aryl triflates and halides. Subsequent reaction of the aryne with silylated phosphines, sulfides, or am...
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| Publicado no: | J Am Chem Soc |
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| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6458107/ https://ncbi.nlm.nih.gov/pubmed/30351137 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/jacs.8b07064 |
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