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Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition
In this work, Ru-based RRAM devices with atomic layer deposited AlO(y)/HfO(x) functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the r...
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| Publicat a: | Nanoscale Res Lett |
|---|---|
| Autors principals: | , , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6411786/ https://ncbi.nlm.nih.gov/pubmed/30859337 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2885-2 |
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