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Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta(2)O(5)-Al(2)O(3) Films Grown on Silicon by Atomic Layer Deposition
Nanolayered Ta(2)O(5)-Al(2)O(3) composite films were grown on n-type silicon by atomic layer deposition (ALD) within the overlapped ALD window of 220–270 °C. Moreover, post-annealing treatment was carried out to eliminate defects and improve film quality. Nanolayered Ta(2)O(5)-Al(2)O(3) composite fi...
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| Publicat a: | Nanoscale Res Lett |
|---|---|
| Autors principals: | , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer US
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6399370/ https://ncbi.nlm.nih.gov/pubmed/30830448 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2907-0 |
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