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Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications
With Moore’s law closing to its physical limit, traditional von Neumann architecture is facing a challenge. It is expected that the computing in-memory architecture-based resistive random access memory (RRAM) could be a potential candidate to overcome the von Neumann bottleneck problem of traditiona...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6367491/ https://ncbi.nlm.nih.gov/pubmed/30734146 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2875-4 |
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