載入...
Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 10(6) cm(− 2). With the electrical performance measure...
Na minha lista:
| 發表在: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , , |
| 格式: | Artigo |
| 語言: | Inglês |
| 出版: |
Springer US
2019
|
| 主題: | |
| 在線閱讀: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6355890/ https://ncbi.nlm.nih.gov/pubmed/30706287 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2872-7 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|