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Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 10(6) cm(− 2). With the electrical performance measure...
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| Опубликовано в: : | Nanoscale Res Lett |
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| Главные авторы: | , , , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Springer US
2019
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6355890/ https://ncbi.nlm.nih.gov/pubmed/30706287 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2872-7 |
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