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Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH
III–V nanowires (NWs) possess great potential for use in future semiconductor technology. Alloying with dilute amounts of nitrogen provides further flexibility in tuning their material properties. In this study, we report on successful in situ nitrogen incorporation into GaP(N) NWs during growth via...
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| Publicado no: | Nanoscale Res Lett |
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| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6311168/ https://ncbi.nlm.nih.gov/pubmed/30594986 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2833-6 |
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