Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Heterostructure field effect transistors (HFETs) utilizing a two dimensional electron gas (2DEG) channel have a great potential for high speed device applications. Zinc oxide (ZnO), a semiconductor with a wide bandgap (3.4 eV) and high electron saturation velocity has gained a great deal of attentio...

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Bibliografiske detaljer
Udgivet i:J Vis Exp
Main Authors: Ding, Kai, Avrutin, Vitaliy, Izioumskaia, Natalia, Ullah, Md Barkat, Özgür, Ümit, Morkoç, Hadis
Format: Artigo
Sprog:Inglês
Udgivet: MyJove Corporation 2018
Fag:
Engineering
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6235586/
https://ncbi.nlm.nih.gov/pubmed/30417860
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3791/58113
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