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Nb(2)O(5) and Ti-Doped Nb(2)O(5) Charge Trapping Nano-Layers Applied in Flash Memory
High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage...
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| Publicado no: | Nanomaterials (Basel) |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6215173/ https://ncbi.nlm.nih.gov/pubmed/30297613 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano8100799 |
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