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Nb(2)O(5) and Ti-Doped Nb(2)O(5) Charge Trapping Nano-Layers Applied in Flash Memory
High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage...
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| 出版年: | Nanomaterials (Basel) |
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| 主要な著者: | , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
MDPI
2018
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6215173/ https://ncbi.nlm.nih.gov/pubmed/30297613 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano8100799 |
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