A carregar...
Ta(2)O(5)-TiO(2) Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory
The charge-trapping memory devices with a structure Pt/Al(2)O(3)/(Ta(2)O(5))(x)(TiO(2))(1−x)/Al(2)O(3)/p-Si (x = 0.9, 0.75, 0.5, 0.25) were fabricated by using rf-sputtering and atomic layer deposition techniques. A special band alignment between (Ta(2)O(5))(x)(TiO(2))(1−x) and Si substrate was desi...
Na minha lista:
| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2017
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5519694/ https://ncbi.nlm.nih.gov/pubmed/28729693 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-05248-6 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|