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Ta(2)O(5)-TiO(2) Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory
The charge-trapping memory devices with a structure Pt/Al(2)O(3)/(Ta(2)O(5))(x)(TiO(2))(1−x)/Al(2)O(3)/p-Si (x = 0.9, 0.75, 0.5, 0.25) were fabricated by using rf-sputtering and atomic layer deposition techniques. A special band alignment between (Ta(2)O(5))(x)(TiO(2))(1−x) and Si substrate was desi...
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| Pubblicato in: | Sci Rep |
|---|---|
| Autori principali: | , , , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group UK
2017
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5519694/ https://ncbi.nlm.nih.gov/pubmed/28729693 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-05248-6 |
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