Steep Switching of In(0.18)Al(0.82)N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †

Lignende værker

• Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD
  af: Xu, Peiqiang, et al.
  Udgivet: (2012)
• Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications
  af: P. Murugapandiyan, et al.
  Udgivet: (2020-06-01)
• The relationship between the dislocations and microstructure in In(0.82)Ga(0.18)As/InP heterostructures
  af: Zhao, Liang, et al.
  Udgivet: (2016)
• Epitaxial Growth of Sc(0.09)Al(0.91)N and Sc(0.18)Al(0.82)N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications
  af: Bartoli, Florian, et al.
  Udgivet: (2020)
• Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors
  af: Lv, Y. J., et al.
  Udgivet: (2016)