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The relationship between the dislocations and microstructure in In(0.82)Ga(0.18)As/InP heterostructures

In this work, we propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In(0.82)Ga(0.18)As/InP heterostructure. The In(0.82)Ga(0.18)As epitaxial layers were grown on the InP (100) substrate at various temperatures (430 °C...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Zhao, Liang, Guo, Zuoxing, Wei, Qiulin, Miao, Guoqing, Zhao, Lei
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2016
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5057123/
https://ncbi.nlm.nih.gov/pubmed/27725753
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep35139
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