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The Effect of Buffer Types on the In(0.82)Ga(0.18)As Epitaxial Layer Grown on an InP (100) Substrate
In(0.82)Ga(0.18)As epitaxial layers were grown on InP (100) substrates at 530 °C by a low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The effects of different buffer structures, such as a single buffer layer, compositionally graded buffer layers, and superlattice buffer lay...
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| Veröffentlicht in: | Materials (Basel) |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI
2018
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6025214/ https://ncbi.nlm.nih.gov/pubmed/29890689 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11060975 |
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