The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate

We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were form...

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Hlavní autoři: Shuhui, Zhang, Lu, Wang, Zhenwu, Shi, Yanxiang, Cui, Haitao, Tian, Huaiju, Gao, Haiqiang, Jia, Wenxin, Wang, Hong, Chen, Liancheng, Zhao
Médium: Artigo
Jazyk:Inglês
Vydáno: Springer 2012
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Original Paper
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3278347/
https://ncbi.nlm.nih.gov/pubmed/22277096
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-87
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