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Stacking faults in β-Ga(2)O(3) crystals observed by X-ray topography
Planar defects in [Image: see text]-oriented β-Ga(2)O(3) wafers were studied using X-ray topography. These planar defects were rectangular with dimensions of 50–150 µm, and the X-ray topography analysis revealed that they were stacking faults (SFs) enclosed by a single partial dislocation loop on th...
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| Publicado no: | J Appl Crystallogr |
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| Main Authors: | , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
International Union of Crystallography
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6157702/ https://ncbi.nlm.nih.gov/pubmed/30279639 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S1600576718011093 |
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