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Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors
The wide research and development on oxide thin-film transistors (TFTs) have led to considerable changes in mainstream technology in various electronic applications. Up to now, much research has been focusing on enhancing the performance of oxide TFTs and simplifying fabricating process. At the stag...
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Publicado no: | Sci Rep |
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Main Authors: | , , |
Formato: | Artigo |
Idioma: | Inglês |
Publicado em: |
Nature Publishing Group UK
2018
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Assuntos: | |
Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6141615/ https://ncbi.nlm.nih.gov/pubmed/30224825 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-32233-4 |
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