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Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors

The wide research and development on oxide thin-film transistors (TFTs) have led to considerable changes in mainstream technology in various electronic applications. Up to now, much research has been focusing on enhancing the performance of oxide TFTs and simplifying fabricating process. At the stag...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Lee, Jinwon, Lim, Keon-Hee, Kim, Youn Sang
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2018
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6141615/
https://ncbi.nlm.nih.gov/pubmed/30224825
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-32233-4
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