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Parasitic Current Induced by Gate Overlap in Thin-Film Transistors
As novel applications of oxide semiconductors are realized, various structural devices and integrated circuits are being proposed, and the gate-overlay defect phenomenon is becoming more diverse in its effects. Herein, the electrical properties of the transistor that depend on the geometry between t...
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| Publié dans: | Materials (Basel) |
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| Auteurs principaux: | , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI
2021
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8125210/ https://ncbi.nlm.nih.gov/pubmed/33946711 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma14092299 |
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