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Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors
[Image: see text] Low power consumption is essential for wearable and internet-of-things applications. An effective way of reducing power consumption is to reduce the operation voltage using a very thin and high-dielectric gate insulator. In an oxide thin-film transistor (TFT), the channel layer is...
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| Publicado en: | ACS Omega |
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| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
American Chemical Society
2021
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| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7860086/ https://ncbi.nlm.nih.gov/pubmed/33553889 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsomega.0c04924 |
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