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Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO(2) RRAM devices
The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufactur...
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| 出版年: | Sci Rep |
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| 主要な著者: | , , , , , , , , , , , , |
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Nature Publishing Group UK
2018
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6057879/ https://ncbi.nlm.nih.gov/pubmed/30042433 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-29548-7 |
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