Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO(2) RRAM devices

The Resistive RAM (RRAM) technology is currently in a level of maturity that calls for its integration into CMOS compatible memory arrays. This CMOS integration requires a perfect understanding of the cells performance and reliability in relation to the deposition processes used for their manufactur...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Grossi, Alessandro, Perez, Eduardo, Zambelli, Cristian, Olivo, Piero, Miranda, Enrique, Roelofs, Robin, Woodruff, Jacob, Raisanen, Petri, Li, Wei, Givens, Michael, Costina, Ioan, Schubert, Markus Andreas, Wenger, Christian
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2018
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6057879/
https://ncbi.nlm.nih.gov/pubmed/30042433
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-29548-7
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