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Material insights of HfO(2)-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition
With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO(2)-...
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| Publicado en: | Sci Rep |
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| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4911574/ https://ncbi.nlm.nih.gov/pubmed/27312225 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep28155 |
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