Thickness scaling of atomic-layer-deposited HfO(2) films and their application to wafer-scale graphene tunnelling transistors

The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO(2), is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we as...

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Publicado no:Sci Rep
Main Authors: Jeong, Seong-Jun, Gu, Yeahyun, Heo, Jinseong, Yang, Jaehyun, Lee, Chang-Seok, Lee, Min-Hyun, Lee, Yunseong, Kim, Hyoungsub, Park, Seongjun, Hwang, Sungwoo
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2016
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4748263/
https://ncbi.nlm.nih.gov/pubmed/26861833
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep20907
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