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Zero-static power radio-frequency switches based on MoS(2) atomristors
Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable,...
Tallennettuna:
| Julkaisussa: | Nat Commun |
|---|---|
| Päätekijät: | , , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Nature Publishing Group UK
2018
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6023925/ https://ncbi.nlm.nih.gov/pubmed/29955064 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-018-04934-x |
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