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Demonstration of large ionization coefficient ratio in AlAs(0.56)Sb(0.44) lattice matched to InP
The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs(0.56)Sb(0.44) p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bu...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group UK
2018
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6002549/ https://ncbi.nlm.nih.gov/pubmed/29904062 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-27507-w |
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