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Thin Al(1−x)Ga(x)As(0.56)Sb(0.44) diodes with extremely weak temperature dependence of avalanche breakdown
When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies. We have carried out such a study on thin Al(1–x)Ga(x...
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| Publicado en: | R Soc Open Sci |
|---|---|
| Autores principales: | , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
The Royal Society Publishing
2017
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5451814/ https://ncbi.nlm.nih.gov/pubmed/28573013 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1098/rsos.170071 |
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