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InGaAs/InAlAs single photon avalanche diode for 1550 nm photons
A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperatur...
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| Udgivet i: | R Soc Open Sci |
|---|---|
| Main Authors: | , , , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
The Royal Society Publishing
2016
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4821258/ https://ncbi.nlm.nih.gov/pubmed/27069647 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1098/rsos.150584 |
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