Demonstration of large ionization coefficient ratio in AlAs(0.56)Sb(0.44) lattice matched to InP

The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs(0.56)Sb(0.44) p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bu...

Fuld beskrivelse

Na minha lista:
Bibliografiske detaljer
Udgivet i:Sci Rep
Main Authors: Yi, Xin, Xie, Shiyu, Liang, Baolai, Lim, Leh Woon, Zhou, Xinxin, Debnath, Mukul C., Huffaker, Diana L., Tan, Chee Hing, David, John. P. R.
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group UK 2018
Fag:
Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6002549/
https://ncbi.nlm.nih.gov/pubmed/29904062
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-27507-w
Tags: Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!

Lignende værker